| PART |
Description |
Maker |
| M14D2561616A-2.5BG M14D2561616A-3BG |
4M x 16 Bit x 4 Banks DDR II SDRAM
|
Elite Semiconductor Memory Technology Inc.
|
| IC43R32400 IC43R32400-5BG IC43R32400-4B IC43R32400 |
DYNAMIC RAM
1M x 32 Bit x 4 Banks (128-MBIT) DDR SDRAM
|
Integrated Circuit Solu...
ICSI[Integrated Circuit Solution Inc]
|
| ADS7608A4A ADS7608A4A-5 ADS7608A4A-55 ADS7608A4A-6 |
Synchronous DRAM(4M X 8 Bit X 4 Banks)
Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM4米8位4银行
Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM米8位4银行
133 Mhz LVTTL synchronous DRAM, 4 M x 8 bit x 4 banks
|
ADATA Technology Co., Ltd.
A-DATA[A-Data Technology]
|
| W9425G6JH |
4M X 4 BANKS X 16 BITS DDR SDRAM
|
Winbond
|
| W9464G6IH |
1M × 4 BANKS × 16 BITS DDR SDRAM
|
Winbond
|
| W9425G8EH |
8M X 4 BANKS X 8 BITS DDR SDRAM
|
Winbond
|
| HY5DU56422DTP HY5DU56822DTP HY5DU56822DTP-J HY5DU5 |
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM) 32M X 8 DDR DRAM, 0.75 ns, PDSO66
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| M65KG256AB8W8 |
256Mbit (4 Banks x 4M x 16) 1.8V Supply, 133MHz Clock Rate, DDR Low Power SDRAM
|
STMicroelectronics
|
| M65KG256AB |
256Mbit (4 Banks x 4M x 16) 1.8V Supply, 133MHz Clock Rate, DDR Low Power SDRAM
|
STMicroelectronics
|
| ASM4SSTVF32852 ASM4SSTVF32852-114BT ASM4ISSTVF3285 |
DDR 24-Bit to 48-Bit Registered Buffer
SSTV SERIES, POSITIVE EDGE TRIGGERED D FLIP-FLOP, TRUE OUTPUT, PBGA114
Specialty Clock Management
2.3 V -2.7 V, DDR 24-bit to 48-bit registered buffer
|
Alliance Semiconductor ...
ALSC[Alliance Semiconductor Corporation]
|
